unisonic technologies co., ltd 12N70K-MT power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r205-028.d 12a, 700v n-channel power mosfet ? description the utc 12N70K-MT are n-channel enhancement mode power mosfet which are produced using utc?s proprietary, planar stripe, dmos technology. these devices are suited for high efficiency switch mode power supply. to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. ? features * r ds(on) < 0.83 ? @ v gs = 10v, i d = 6.0a * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 12n70kl-tf1-t 12n70kg-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source ? marking
12N70K-MT power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r205-028.d ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage v gss 30 v continuous i d 12 a drain current pulsed (note 2) i dm 48 a avalanche energy single pulsed (note 3) e as 220 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation p d 52 c/w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. l=3mh, i as =12a, v dd = 50v, r g =25 ? , starting t j =25c 4. i sd 12a, di/dt 200a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 2.40 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 700 v drain-source leakage current i dss v ds = 700 v, v gs = 0 v 10 a gate-source leakage current i gss v gs = 30 v, v ds = 0 v 100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 0.7 v/c on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 6.0a 0.70 0.83 ? dynamic characteristics input capacitance c iss 1600 1900 pf output capacitance c oss 160 270 pf reverse transfer capacitance c rss v ds = 25 v, v gs = 0 v, f = 1mhz 9 18 pf switching characteristics turn-on delay time t d(on) 96 120 ns turn-on rise time t r 122 135 ns turn-off delay time t d(off) 184 200 ns turn-off fall time t f v dd =30v, i d =0.5a, r g =25 ? (note 1, 2) 102 135 ns total gate charge q g 44 60 nc gate-source charge q gs 10 nc gate-drain charge q gd v ds =50v, v gs =1.0v, i d =1.3a (note 1, 2) 17 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s = 12a 1.4 v maximum continuous drain-source diode forward current i s 12 a maximum pulsed drain-source diode forward current i sm 48 a notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
12N70K-MT power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r205-028.d ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
12N70K-MT power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r205-028.d ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l v dd pulse width 1 s duty factor 0.1% v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 50k ? 0.3 f dut v ds same type as d.u.t. 0.2 f 12v v gs 3ma 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
12N70K-MT power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r205-028.d ? typical characteristics drain current, i d (a) drain current, i d (a) 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) 0 drain current, i d (a) 0.2 0 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 0 1 2 3 4 5 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 12 6 123456 14 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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